Light-induced negative differential resistance in graphene/Si-quantum-dot tunneling diodes
نویسندگان
چکیده
منابع مشابه
Light-induced negative differential resistance in graphene/Si-quantum-dot tunneling diodes
One of the interesing tunneling phenomena is negative differential resistance (NDR), the basic principle of resonant-tunneling diodes. NDR has been utilized in various semiconductor devices such as frequency multipliers, oscillators, relfection amplifiers, logic switches, and memories. The NDR in graphene has been also reported theoretically as well as experimentally, but should be further stud...
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GaN/AlN resonant tunneling diodes RTD were grown by metal-organic chemical vapor deposition MOCVD and negative differential resistance with peak-to-valley ratios as high as 2.15 at room temperature was demonstrated. Effect of material quality on RTDs’ performance was investigated by growing RTD structures on AlN, GaN, and lateral epitaxial overgrowth GaN templates. Our results reveal that negat...
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ژورنال
عنوان ژورنال: Scientific Reports
سال: 2016
ISSN: 2045-2322
DOI: 10.1038/srep30669